SIA433EDJ-T1-GE3 Datasheet
SIA433EDJ-T1-GE3 Datasheet
Totale pagine: 9
Dimensioni: 252,04 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SIA433EDJ-T1-GE3
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Produttore Vishay Siliconix Serie TrenchFET® Tipo FET P-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 20V Corrente - Scarico continuo (Id) @ 25 ° C 12A (Tc) Tensione inverter (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 18mOhm @ 7.6A, 4.5V Vgs (th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 8V Vgs (massimo) ±12V Capacità di ingresso (Ciss) (Max) @ Vds - Funzione FET - Dissipazione di potenza (max) 3.5W (Ta), 19W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore PowerPAK® SC-70-6 Single Pacchetto / Custodia PowerPAK® SC-70-6 |