SI4834BDY-T1-GE3 Datasheet
![SI4834BDY-T1-GE3 Datasheet Pagina 1](http://pneda.ltd/static/datasheets/images/28/si4834bdy-t1-ge3-0001.webp)
![SI4834BDY-T1-GE3 Datasheet Pagina 2](http://pneda.ltd/static/datasheets/images/28/si4834bdy-t1-ge3-0002.webp)
![SI4834BDY-T1-GE3 Datasheet Pagina 3](http://pneda.ltd/static/datasheets/images/28/si4834bdy-t1-ge3-0003.webp)
![SI4834BDY-T1-GE3 Datasheet Pagina 4](http://pneda.ltd/static/datasheets/images/28/si4834bdy-t1-ge3-0004.webp)
![SI4834BDY-T1-GE3 Datasheet Pagina 5](http://pneda.ltd/static/datasheets/images/28/si4834bdy-t1-ge3-0005.webp)
![SI4834BDY-T1-GE3 Datasheet Pagina 6](http://pneda.ltd/static/datasheets/images/28/si4834bdy-t1-ge3-0006.webp)
![SI4834BDY-T1-GE3 Datasheet Pagina 7](http://pneda.ltd/static/datasheets/images/28/si4834bdy-t1-ge3-0007.webp)
Produttore Vishay Siliconix Serie TrenchFET® Tipo FET 2 N-Channel (Dual) Funzione FET Logic Level Gate Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 5.7A Rds On (Max) @ Id, Vgs 22mOhm @ 7.5A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Capacità di ingresso (Ciss) (Max) @ Vds - Potenza - Max 1.1W Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto / Custodia 8-SOIC (0.154", 3.90mm Width) Pacchetto dispositivo fornitore 8-SO |
Produttore Vishay Siliconix Serie TrenchFET® Tipo FET 2 N-Channel (Dual) Funzione FET Logic Level Gate Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 5.7A Rds On (Max) @ Id, Vgs 22mOhm @ 7.5A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Capacità di ingresso (Ciss) (Max) @ Vds - Potenza - Max 1.1W Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto / Custodia 8-SOIC (0.154", 3.90mm Width) Pacchetto dispositivo fornitore 8-SO |