SI3493DDV-T1-GE3 Datasheet
SI3493DDV-T1-GE3 Datasheet
Totale pagine: 7
Dimensioni: 153,05 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SI3493DDV-T1-GE3
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Produttore Vishay Siliconix Serie TrenchFET® Tipo FET P-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 20V Corrente - Scarico continuo (Id) @ 25 ° C 8A (Tc) Tensione inverter (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 7.5A, 4.5V Vgs (th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (massimo) ±8V Capacità di ingresso (Ciss) (Max) @ Vds 1825pF @ 10V Funzione FET - Dissipazione di potenza (max) 3.6W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore 6-TSOP Pacchetto / Custodia SOT-23-6 Thin, TSOT-23-6 |