SI1970DH-T1-GE3 Datasheet
SI1970DH-T1-GE3 Datasheet
Totale pagine: 7
Dimensioni: 115,33 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SI1970DH-T1-GE3
![SI1970DH-T1-GE3 Datasheet Pagina 1](http://pneda.ltd/static/datasheets/images/28/si1970dh-t1-ge3-0001.webp)
![SI1970DH-T1-GE3 Datasheet Pagina 2](http://pneda.ltd/static/datasheets/images/28/si1970dh-t1-ge3-0002.webp)
![SI1970DH-T1-GE3 Datasheet Pagina 3](http://pneda.ltd/static/datasheets/images/28/si1970dh-t1-ge3-0003.webp)
![SI1970DH-T1-GE3 Datasheet Pagina 4](http://pneda.ltd/static/datasheets/images/28/si1970dh-t1-ge3-0004.webp)
![SI1970DH-T1-GE3 Datasheet Pagina 5](http://pneda.ltd/static/datasheets/images/28/si1970dh-t1-ge3-0005.webp)
![SI1970DH-T1-GE3 Datasheet Pagina 6](http://pneda.ltd/static/datasheets/images/28/si1970dh-t1-ge3-0006.webp)
![SI1970DH-T1-GE3 Datasheet Pagina 7](http://pneda.ltd/static/datasheets/images/28/si1970dh-t1-ge3-0007.webp)
Produttore Vishay Siliconix Serie TrenchFET® Tipo FET 2 N-Channel (Dual) Funzione FET Logic Level Gate Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 1.3A Rds On (Max) @ Id, Vgs 225mOhm @ 1.2A, 4.5V Vgs (th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 10V Capacità di ingresso (Ciss) (Max) @ Vds 95pF @ 15V Potenza - Max 1.25W Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto / Custodia 6-TSSOP, SC-88, SOT-363 Pacchetto dispositivo fornitore SC-70-6 (SOT-363) |