RDD022N60TL Datasheet
RDD022N60TL Datasheet
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Dimensioni: 1.134,9 KB
Rohm Semiconductor
Sito web: https://www.rohm.com/
Questa scheda tecnica copre i numeri di parte di 1:
RDD022N60TL
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Produttore Rohm Semiconductor Serie - Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 600V Corrente - Scarico continuo (Id) @ 25 ° C 2A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.7Ohm @ 1A, 10V Vgs (th) (Max) @ Id 4.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 175pF @ 25V Funzione FET - Dissipazione di potenza (max) 20W (Tc) Temperatura di esercizio 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore CPT3 Pacchetto / Custodia TO-252-3, DPak (2 Leads + Tab), SC-63 |