PH8230E Datasheet
PH8230E Datasheet
Totale pagine: 13
Dimensioni: 294,06 KB
Nexperia
Questa scheda tecnica copre i numeri di parte di 1:
PH8230E,115
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Produttore Nexperia USA Inc. Serie TrenchMOS™ Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 67A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.2mOhm @ 10A, 10V Vgs (th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 1400pF @ 10V Funzione FET - Dissipazione di potenza (max) 62.5W (Tc) Temperatura di esercizio - Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore LFPAK56, Power-SO8 Pacchetto / Custodia SC-100, SOT-669 |