FCH150N65F-F155 Datasheet
FCH150N65F-F155 Datasheet
Totale pagine: 12
Dimensioni: 1.496,94 KB
ON Semiconductor
Sito web: http://www.onsemi.com/
Questa scheda tecnica copre i numeri di parte di 1:
FCH150N65F-F155
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Produttore ON Semiconductor Serie SuperFET® II Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 650V Corrente - Scarico continuo (Id) @ 25 ° C 24A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V Vgs (th) (Max) @ Id 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 3737pF @ 100V Funzione FET - Dissipazione di potenza (max) 298W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore TO-247 Long Leads Pacchetto / Custodia TO-247-3 |